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Updated: May 15, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Development of silicon-on-insulator direct electron detector with analog memories in pixels for sub-microsecond
Takafumi Ishida1,2, Kosei Sugie2, Toshinobu Miyoshi3
1Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8601, Japan.
Abstract:
We have developed a high-speed recordable direct electron detector based on silicon-on-insulator technology. The detector has 16 analog memories in each pixel to record 16 images with sub-microsecond temporal resolution. A dedicated data acquisition system has also been developed to display and record the results on a personal computer. The performance of the direct electron detector as an image sensor is evaluated under electron irradiation with an energy of 30 keV in a low-voltage transmission electron microscope equipped with a photocathode electron gun. We demonstrate that the detector can record images at an exposure time of 100 ns and an interval of 900 ns.
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