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Rules for dissipationless topotronics.

Qing Yan1, Hailong Li1, Hua Jiang2,3

  • 1International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.

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Summary
This summary is machine-generated.

This study introduces a criterion for truly dissipationless electronics using topological systems. By balancing injecting, tunneling, and backscattering modes, researchers can achieve equilibrium for next-generation information processing.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Information Science
  • Materials Science

Background:

  • Topological systems with gapless boundary states are explored for dissipationless electronics.
  • Recent studies reveal energy dissipation in quantized electrical transport within these systems.

Purpose of the Study:

  • To establish a criterion for achieving truly no-dissipation design in topological electronic devices.
  • To identify suitable topological materials and design novel device architectures for dissipationless operation.

Main Methods:

  • Development of a theoretical criterion: N_in = N_tunl + N_bs, balancing modes in injection, tunneling, and backscattering.
  • Advocacy for Chern insulators with higher Chern numbers for device functionality.
  • Design of topological current dividers and collectors.

Main Results:

  • A criterion for no-dissipation is proposed by matching the number of participating modes.
  • Chern insulators are identified as essential for simultaneously achieving functionality and no-dissipation.
  • Novel topological current divider and collector designs are presented that evade dissipation.

Conclusions:

  • The proposed criterion enables the design of truly dissipationless topological electronic devices.
  • Chern insulators are crucial for realizing the no-dissipation rule in functional devices.
  • This work advances the field of topotronics by providing a pathway for dissipationless electronic components.