GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function

Area of Science:

• Semiconductor Device Physics
• Materials Science
• Electrical Engineering

Background:

• Conventional MOSFETs face limitations at scaled dimensions.
• Gallium Nitride (GaN) offers superior electronic properties for advanced devices.
• Junction-less double-gate (JLDG) structures present a pathway to overcome scaling challenges.

Purpose of the Study:

• To investigate the performance of GaN-based JLDG MOSFETs.
• To optimize device parameters like doping profile (N_D) and gate work function (Ф).
• To evaluate figures of merit (FOMs) for scaled devices.

Main Methods:

• Device modeling using Silvaco Atlas 2D simulator.
• Validation against analytical models for short-channel JLDG MOSFETs.
• Systematic tuning of doping concentration and gate work function.

Main Results:

• Maximum ON-current (I_ON) of 0.9 mA/μm achieved with N_D = 1 × 10¹⁹ cm^-3.
• Lowest OFF-state current (I_OFF) of 1.24 × 10^-16 A/μm and power dissipation of 9.69 × 10^-17 W/μm at Ф = 5.1 eV (Au).
• Exceptional ON-OFF current ratio (I_ON/I_OFF) of 7.56 × 10¹².

Conclusions:

• GaN JLDG MOSFETs demonstrate significant improvements in key performance metrics.
• Optimized doping and gate work function are crucial for device enhancement.
• These devices are highly promising for low-power logic switching applications in next-generation electronics.