Beta Irradiation Effects on Electrical Characteristics of Graphene-Doped PVA/n-type Si Nanostructures

This study investigates the beta irradiation's impact on the electrical features of interfacial nanostructures composed of poly(vinyl alcohol) (PVA) doped with graphene. The integration of graphene, a 2D carbon allotrope renowned for its exceptional electrical conductivity, into PVA nanostructures holds significant promise for advanced electronic applications. Beta irradiation, as a controlled method of introducing radiation, offers a unique avenue to modulate the properties of these nanostructures. Therefore, this study examines the Au/3% graphene(Gr)-doped PVA/n-type Si structure with and without beta (β) radiation. The effect of beta radiation on the electrical properties of the Au/3% graphene(Gr)-doped PVA/n-type Si structure has been researched by utilizing the current-voltage (I-V) data. The studied structures were exposed to a ⁹⁰Sr β-ray source at room temperature to show the effect of beta radiation. The series resistance (R _s), shunt resistance (R _sh), ideality factor (n), barrier height (BH) (Φ_B0), and saturation current (I _o) were computed using the I-V data after ⁹⁰Sr β-ray irradiation (0, 6, and 18 kGy) and before using the thermionic emission, Norde, and Cheung methods. The BH, ideality factor, and series resistance were calculated using the I-V data as follows: 0.888 eV, 3.21, and 5.25 kΩ for 0 kGy; 0.782 eV, 5.30, and 3.47 for 6 kGy; 0.782 eV, 5.46, and 2.63 kΩ for 18kGy. The BH, ideality factor, and series resistance were also calculated using the Cheng Methods, and the following results were found respectively: 7.22, 0.74, and 3.97 kΩ (Cheng I), and 3.22 kΩ (Cheng II) for 0 kGy; 5.14, 0.813, and 2.72 kΩ (Cheng I), and 2.14 kΩ (Cheng II) for 6 kGy; 6.78, 0.721, and 1.96 kΩ (Cheng I), 1.64 kΩ (Cheng II) for 18 kGy. The BH and series resistance were defined as 0.905 and 16.12 kΩ for 0 kGy, 0.859 and 5.31 kΩ for 6 kGy, and 0.792 and 2.49 kΩ for 18 kGy, respectively. Interface states density (N _ss) as a function of E _c-E _ss was also attained by taking into account the voltage dependence of n, Φ_B, and R _s. Experimental results showed that the values of n and N _ss increased with an increase in the β-ray radiation dose. On the other hand, the saturation current (I _o), Φ_B0, and R _s values decreased with the increase in the β-ray radiation dose. The obtained results indicate a nuanced interplay between β irradiation dose and the nanostructure's overall electrical properties. Insights gained from this study contribute to the understanding of radiation-induced effects on graphene-doped polymer nanostructures, providing valuable information for optimizing their performance in electronic applications.