NiO thickness measurement using a rectangular-type Sagnac interferometer as the material transport layer in a...

This work aims to utilize a phase-shifting technique in a rectangular-type Sagnac interferometer (RTSI) to measure the thickness of a thin film of nickel (II) oxide (NiO) in an electron transport layer (ETL) in perovskite solar cell preparation. The NiO layer is deposited on a fluorine-doped tin oxide (FTO) glass substrate. In the RTSI setup, the signal output from the interferometer is divided into the reference and testing arms using a nonpolarizing beam splitter (NPBS). The balanced photodetectors then detect the signal, with the FTO/NiO layer placed in the testing arm and pure FTO in the reference arm. By analyzing the signal intensities at polarization settings of 0° to 180°, the phase shift and thickness of the NiO layer can be determined. The thickness values of FTO and NiO films obtained through three different phase-shifting algorithms of three-, four-, and five-steps are calculated. The obtained NiO thickness values are validated against scanning electron microscopy (SEM). Finally, by considering the NiO thickness value that exhibits the lowest percentage error compared to one from SEM, it is confirmed that the three-step algorithm is the most suitable scheme for obtaining intensities at 0°, 45°, and 90°. Therefore, the proposed setup shows promise as a replacement for SEM in thickness measurements.