Related Experiment Video
Updated: Aug 4, 2026
09:10
Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
27.7K
High-power distributed feedback laser diode arrays with narrow spectral width over a wide temperature range
Optics Letters
|June 14, 2024
Summary
High-power 808nm distributed feedback (DFB) laser diode arrays achieve 134W output power. These lasers maintain stable wavelengths over an extensive temperature range, making them ideal for solid-state laser pumping.
Area of Science:
- Optics and Photonics
- Semiconductor Devices
Background:
- High-power semiconductor lasers are crucial as pumping sources for solid-state lasers.
- Stabilized wavelengths are essential for efficient laser operation.
Purpose of the Study:
- To develop and characterize high-power 808nm distributed feedback (DFB) laser diode arrays.
- To achieve a wide temperature locking range for stable wavelength emission.
Main Methods:
- Fabrication of first-order sinusoidal gratings using nanoimprint lithography.
- Utilized inductively coupled plasma (ICP) dry etching and wet polishing.
- Experimental characterization of laser diode arrays under pulsed current operation.
Main Results:
- Achieved a maximum output power of 134W at 150A pulsed current with a heat sink temperature of 25°C.
- Measured a slope efficiency of 1.1 W/A.
- Demonstrated stable narrow spectral width operation over a wide temperature range (-30 to 90°C) with a low temperature drift coefficient (0.0595 nm/K).
Conclusions:
- The developed 808nm DFB laser diode arrays offer high power and excellent wavelength stability.
- These arrays are suitable as advanced pumping sources for solid-state laser applications.
- The fabrication process and demonstrated performance highlight significant advancements in high-power semiconductor laser technology.
