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Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation
Jing-Yuan Wu1, Hai-Yang Jiang1, Zhao-Yang Wen1
1Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China.
ACS Applied Materials & Interfaces
|June 15, 2024
Summary
Researchers developed advanced 2D Schottky junction photodetectors using graphene/MoS2/PtSe2. These devices achieve high performance for self-powered photodetection and optical sensing, overcoming previous limitations.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Metal-semiconductor junctions are crucial for electronic and optoelectronic devices.
- Schottky junction photodetectors using 2D materials offer self-powered operation with fast response and high signal-to-noise ratio.
- Uncontrolled Schottky barriers due to Fermi level pinning limit performance.
Purpose of the Study:
- To realize all-2D Schottky junctions with near-ideal Fermi level depinning.
- To demonstrate high-performance asymmetric diodes and photodetectors based on 2D heterostructures.
- To investigate the photocurrent generation mechanism and device performance.
Main Methods:
- Fabrication of all-2D Schottky junctions using multilayer graphene/MoS2/PtSe2 heterostructures.
- Characterization of device performance, including current rectification ratio and ideality factor.
- Scanning photocurrent mapping to analyze photocurrent generation mechanisms.
Main Results:
- Achieved near-ideal Fermi level depinning due to high-quality 2D interfaces.
- Demonstrated asymmetric diodes with a rectification ratio >10^5 and ideality factor of 1.2.
- Observed switching of photocurrent generation from photovoltaic to photogating effect with varying drain bias.
- Self-powered photodetector with response time <100 μs (photovoltaic mode).
- High responsivity up to 460 A/W (photogating mode) due to high photogain.
- Successful application in single-pixel imaging with high-contrast photodetection.
Conclusions:
- High-quality interfaces in all-2D Schottky junctions enable Fermi level depinning.
- The graphene/MoS2/PtSe2 heterostructure functions as a versatile device for both energy conversion and optical sensing.
- The developed photodetector exhibits excellent performance for self-powered photodetection and imaging applications.
- This work advances the development of high-performance 2D Schottky junction photodetectors.
Keywords:
Schottky junctionmolybdenum sulfidescanning photocurrent mappingself-powered photodetectorsingle-pixel imagingMore Related Videos
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