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Updated: Jun 23, 2025

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Direction Dependent Ferroelectricity and Conductivity in a Single Crystal 2D Halide Double Perovskite
Shubham Ajaykumar Rajput1, Sudhadevi Antharjanam2, Aravind Kumar Chandiran1
1Department of Chemical Engineering, Indian Institute of Technology Madras, Adyar, Chennai, Tamil Nadu, 600036, India.
Abstract:
Halide ferroelectric materials have garnered a lot of interest because of their distinctive electrical and structural characteristics. In this study, the design and development of a new non-centrosymmetric 2D layered halide double perovskite material, Cl1.14Br2.86PA4AgInBr8 (CPAIn) is reported. This material shows ferroelectric properties above room temperature, with a Curie temperature of 190 °C. This behavior is achieved through the substitution of the halogenated A-site organic linker, 3-chloropropylammonium. CPAIn exhibits anisotropic ferroelectric behavior with higher spontaneous polarization of 6.25 µC cm-2 along the perpendicular direction to the octahedral layers, whereas the value decreases to 0.174 µC cm-2 between sheets. While using bottom contact to study the nature of polarity within a sheet, the P-E loop displays capacitive loop. The nature and value of polarization is highly direction dependent, and to further understand the mechanism of conduction, a combination of temperature-dependent impedance studies and poling dependent conductivity techniques are employed. These directional dependent properties hold immense potential in memory devices, sensors and photovoltaics, piezoelectric devices and energy storage.
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