Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

239
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
239
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

333
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
333
Energy Bands in Solids01:01

Energy Bands in Solids

823
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
823
Biasing of P-N Junction01:16

Biasing of P-N Junction

505
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
505
Types of Semiconductors01:20

Types of Semiconductors

585
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
585
Band Theory02:35

Band Theory

15.1K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
15.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Chiral Quasi-Bound States in the Continuum on the Verge of the Light Cone.

Nano letters·2026
Same author

Switchable band alignment in 2D-perovskite/WS<sub>2</sub>heterostructures for tunable exciton transport and valley polarization.

Reports on progress in physics. Physical Society (Great Britain)·2026
Same author

Single-crystal, 4-inch and ultrathin gallium oxide for sundial-inspired high-dimensional solar-blind photodetection metasystem.

Nature communications·2026
Same author

Quantum well-inspired energy level design in multicomponent organic solar cells for improved energy loss management.

Materials horizons·2026
Same author

Chitinase 38 confers cadmium tolerance via reduced cadmium uptake and metabolic reprogramming in barley.

Plant physiology·2026
Same author

Aluminum-Triggered Dealloying for Hierarchical Porous High-Entropy Alloy Electrodes Enabling Industrially Stable Oxygen Evolution.

ACS nano·2026
Same journal

Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits.

ACS nano·2026
Same journal

Tunable Nanoparticle Thin-Film Reveals Distance Dependence of Auger-Mediated Radiation Enhancement in Diffuse Midline Glioma.

ACS nano·2026
Same journal

G-Quadruplex Network Engineering in Ionogels: Realizing Robust Biosensing Interfaces for Plant Electrophysiology.

ACS nano·2026
Same journal

Announcing the 2026 <i>ACS Nano</i> Lectureship and <i>ACS Nano</i> Impact Award Laureates.

ACS nano·2026
Same journal

Ultrafast Self-Assembly of Zeolitic Imidazolate Framework-8 Enables Antibody Orientation for Ultrasensitive Lateral Flow Immunoassays.

ACS nano·2026
Same journal

Interfacial Salt Engineering with Alkali and Ammonium Additives for Stable Pure-Blue Perovskite Light-Emitting Diodes and Micropatterned Displays.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Jun 23, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.6K

Programmable Interfacial Band Configuration in WS2/Bi2O2Se Heterojunctions.

Hanwen Zhang1,2, Jianhui Fu3, Alexandra Carvalho4

  • 1Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China.

ACS Nano
|June 18, 2024
PubMed
Summary
This summary is machine-generated.

Researchers engineered tunable band alignments in transition-metal dichalcogenide (TMD) heterojunctions by varying Bi2O2Se thickness. This allows for controlled fluorescence patterning, advancing photonic applications.

Keywords:
2D materialsband alignmentfluorescence designheterojunctionslaser modification

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.5K

Related Experiment Videos

Last Updated: Jun 23, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.6K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals heterojunctions (TMDs) are key for light manipulation.
  • Band alignment (type-I vs. type-II) dictates light-material interactions.
  • Tuning band alignment without changing materials is challenging.

Purpose of the Study:

  • To develop a novel method for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions.
  • To demonstrate the ability to tune band alignment from type-I to type-II and back by controlling Bi2O2Se thickness.
  • To achieve localized fluorescence patterning via focused laser beam (FLB) manipulation.

Main Methods:

  • Utilized Bi2O2Se with thickness-dependent band gap as the bottom layer in WS2/Bi2O2Se heterojunctions.
  • Varied Bi2O2Se thickness from monolayer to multilayer to tune band alignment.
  • Employed steady-state and transient spectroscopy, alongside density functional theory (DFT) calculations for verification.
  • Used focused laser beam (FLB) to create localized fluorescence micropatterns.

Main Results:

  • Successfully tuned the band alignment from type-I to type-II and back to type-I by increasing Bi2O2Se thickness.
  • Verified band architecture conversion through spectroscopic and computational methods.
  • Demonstrated a sophisticated band architecture with both fluorescence-quenched and fluorescence-recovered regions in a single sample.
  • Achieved predesigned localized fluorescence micropatterns on WS2 via FLB programming.

Conclusions:

  • The study presents an innovative strategy for engineering interfacial band configurations in TMD heterojunctions.
  • Thickness control of Bi2O2Se offers a versatile method for tuning band alignment.
  • This approach enables precise control over optical properties, paving the way for multifunctional photonic devices.
  • The developed band architecture design strategy significantly advances the potential of TMD heterojunctions.