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Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode.

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|June 19, 2024
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Summary
This summary is machine-generated.

Deep defects in long-wave infrared (LWIR) HgCdTe photodiodes were identified using deep-level transient spectroscopy (DLTS) and photoluminescence (PL). Mercury vacancies (VHg) were found to be the primary cause of increased dark currents in these LWIR devices.

Keywords:
Auger suppressionDLTSHgCdTedefect levelsinfrared detectorsphotoluminescence

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Optoelectronics

Background:

  • HgCdTe heterostructures are crucial for long-wave infrared (LWIR) photodiode applications.
  • Understanding deep defects is essential for optimizing photodiode performance and reducing dark currents.

Purpose of the Study:

  • To characterize deep defects in LWIR HgCdTe photodiodes.
  • To identify the specific defects responsible for increased dark currents.
  • To determine the physical parameters of these defects.

Main Methods:

  • Metal-organic chemical vapor deposition (MOCVD) for photodiode fabrication.
  • Deep-level transient spectroscopy (DLTS) for defect energy level and concentration measurements.
  • Photoluminescence (PL) spectroscopy for defect verification and energy level determination.

Main Results:

  • Two defects were identified: an electron trap (252 meV) and a hole trap (89 meV).
  • The hole trap, attributed to mercury vacancies (VHg), was found to be the main contributor to dark current.
  • Specific parameters for the VHg trap were determined: capture cross-section (σ = 10⁻¹⁶–4 × 10⁻¹⁵ cm²) and concentration (N = 3–4 × 10¹⁴ cm⁻³).

Conclusions:

  • Mercury vacancies (VHg) are a significant defect in LWIR HgCdTe photodiodes.
  • VHg defects directly increase dark currents, impacting device performance.
  • The detailed characterization provides critical data for mitigating dark current in future HgCdTe photodiode designs.