Avalanche Multiplication in Two-Dimensional Layered Materials: Principles and Applications

The avalanche multiplication effect, capable of significantly amplifying weak optical or electrical signals, plays a pivotal role in enhancing the performance of electronic and optoelectronic devices. This effect has been widely employed in devices such as avalanche photodiodes, impact ionization avalanche transit time diode, and impact ionization field-effect transistors, enabling diverse applications in biomedical imaging, 3D LIDAR, high-frequency microwave circuits, and optical fiber communications. However, the evolving demands in these fields require avalanche devices with superior performance, including lower power consumption, reduced avalanche threshold energy, higher efficiency, and improved sensitivity. Over the years, significant efforts have been directed towards exploring novel device architectures and multiplication mechanisms. The emergence of two-dimensional (2D) materials, characterized by their exceptional light-matter interaction, tunable bandgaps, and ease of forming junctions, has opened up new avenues for developing high-performance avalanche devices. This review provides an overview of carrier multiplication mechanisms and key performance metrics for avalanche devices. We discuss several device structures leveraging the avalanche multiplication effect, along with their electrical and optoelectronic properties. Furthermore, we highlight representative applications of avalanche devices in logic circuits, optoelectronic components, and neuromorphic computing systems. By synthesizing the principles and applications of the avalanche multiplication effect, this review aims to offer insightful perspectives on future research directions for 2D material-based avalanche devices.