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Updated: Jun 22, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure
Kasper A Hunnestad1,2,3, Hena Das4, Constantinos Hatzoglou1
1Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway.
Oxygen vacancies in oxide heterostructures are quantified in 3D using atom probe tomography. Their ordered distribution stabilizes ferroelectric and ferrimagnetic properties in multiferroic superlattices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Oxide heterostructures display diverse physical properties, including unconventional superconductivity and topological polar order.
- Oxygen content variations significantly influence electronic correlation phenomena in oxides, but quantifying their impact is challenging.
Purpose of the Study:
- To quantify the distribution of oxygen vacancies in multiferroic (LuFeO3)9/(LuFe2O4)1 superlattices.
- To correlate oxygen vacancy distribution with electric and magnetic properties.
- To establish a 3D, atomic-scale approach for defect quantification in oxide heterostructures.
Main Methods:
- Atom probe tomography was employed to measure chemical composition and map oxygen vacancy distribution.
- Analysis focused on correlating 3D vacancy arrangements with ferroelectric and ferrimagnetic properties.
Main Results:
- Oxygen vacancies were observed to form a layered 3D structure with a local density of ~10^14 cm^-2.
- Vacancy ordering aligns with ferrimagnetic LuFe2O4 layers, driven by reduced local formation energy.
- Oxygen vacancies play a critical role in stabilizing ferroelectric domains in LuFeO3 and ferrimagnetism in LuFe2O4.
Conclusions:
- Pronounced interactions exist between oxygen vacancies and multiferroic order in the studied superlattices.
- The developed method allows for precise 3D quantification of oxygen defects.
- This provides new avenues for controlling properties in oxide heterostructures through defect engineering.
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