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A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations

Li Liu1, Jingqi Guo2, Yiheng Shi2

  • 1State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|June 27, 2024
PubMed

Keywords:
SiC trench power MOSFETUISfailure analysisoptimized structure

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