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Updated: Jun 22, 2025

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Design of Fluxgate Current Sensor Based on Magnetization Residence Times and Neural Networks
Jingjie Li1,2, Wei Ren1,2, Yanshou Luo3
1Key Laboratory of Intelligent Control and Optimization for Industrial Equipment of Ministry of Education, Dalian University of Technology, Dalian 116024, China.
Abstract:
This study introduces a novel fluxgate current sensor with a compact, ring-shaped configuration that exhibits improved performance through the integration of magnetization residence times and neural networks. The sensor distinguishes itself with a unique magnetization profile, denoted as M waves, which emerge from the interaction between the target signal and ambient magnetic interference, effectively enhancing interference suppression. These M waves highlight the non-linear coupling between the magnetic field and magnetization residence times. Detection of these residence times is accomplished using full-wave rectification circuits and a Schmitt trigger, with a digital output provided by timing sequence detection. A dual-layer feedforward neural network deciphers the target signal, exploiting this non-linear relationship. The sensor achieves a linearity error of 0.054% within a measurement range of 15 A. When juxtaposed with conventional sensors utilizing the residence-time difference strategy, our sensor reduces linearity error by more than 40-fold and extends the effective measurement range by 150%. Furthermore, it demonstrates a significant decrease in ambient magnetic interference.
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