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Updated: Jun 22, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Sandwiched WS2/MoTe2/WS2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding
Ziqiao Wu1, Meifei Chen2, Xinyue Liu3
1School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China.
Abstract:
Photodetectors based on two-dimensional van der Waals (2D vdW) heterostructures with high detectivity and rapid response have emerged as promising candidates for next-generation imaging applications. However, the practical application of currently studied 2D vdW heterostructures faces challenges related to insufficient light absorption and inadequate separation of photocarriers. To address these challenges, we present a sandwiched WS2/MoTe2/WS2 heterostructure with a completely depleted interlayer, integrated on a mirror electrode, for a highly efficient photodetector. This well-designed structure enhances light-matter interactions while facilitating effective separation and rapid collection of photocarriers. The resulting photodetector exhibits a broadband photoresponse spanning from deep ultraviolet to near-infrared wavelengths. When operated in self-powered mode, the device demonstrates an exceptional response speed of 22/34 μs, along with an impressive detectivity of 8.27 × 1010 Jones under 635 nm illumination. Additionally, by applying a bias voltage of -1 V, the detectivity can be further increased to 1.49 × 1012 Jones, while still maintaining a rapid response speed of 180/190 μs. Leveraging these outstanding performance metrics, high-resolution visible-near-infrared light imaging has been successfully demonstrated using this device. Our findings provide valuable insights into the optimization of device architecture for diverse photoelectric applications.
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