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CsPbBr3 Quantum Dot Sensitization Enabled Type-III SnSe2/MoTe2 Heterojunction for Fast and Self-Powered Visible
Dongxue Wang1, Zhaoli Chen1, Jiabin Li1
1Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), Faculty of Engineering, South China Normal University, Foshan, People's Republic of China.
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Self-powered photodetectors based on type-III two-dimensional (2D) heterojunctions are attractive for zero-bias operation, yet their visible light responsivity is often limited by insufficient photocarrier generation in atomically thin absorbers. Here, we report a sensitized self-powered visible photodetector in which CsPbBr3 quantum dots (QDs) are integrated with a type-III SnSe2/MoTe2 heterojunction. Due to the built-in potential difference of 0.24 V between the CsPbBr3 QDs and SnSe2, the resulting built-in electric field enables directional hole injection from CsPbBr3 into SnSe2. This increases the number of photogenerated carriers participating in photovoltaic conversion and suppresses recombination. Under 405 nm illumination at zero bias, the optimized device delivers a responsivity (R) of 764.4 mA W-1, an external quantum efficiency (EQE) of 245.2%, a specific detectivity (D*) of 2 × 1012 Jones, and a microsecond-scale response time of 740/960 µs. The device also exhibits stable cycling behavior and practical capability in imaging and optical logic applications. This work provides a viable strategy for enhancing self-powered visible photodetection by coupling a strongly absorbing QD sensitizer with a type-III 2D heterojunction.
