Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metallic Solids02:37

Metallic Solids

18.4K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
18.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

238
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
238
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

330
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
330
Types of Semiconductors01:20

Types of Semiconductors

585
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
585
Semiconductors01:22

Semiconductors

682
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
682
Bonding in Metals02:32

Bonding in Metals

47.1K
Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”. 
47.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Single-Metal-Atom Chains at Mirror Twin Boundaries in Transition Metal Dichalcogenides: Electronic, Magnetic, and Catalytic Properties.

ACS applied materials & interfaces·2026
Same author

Defects and defect-mediated engineering of two-dimensional materials: challenges and open questions.

Beilstein journal of nanotechnology·2026
Same author

Large-Scale Integration of Experimental and Computational Data for 2D Materials.

ACS nano·2026
Same author

<math><semantics><msub><mi>MnBr</mi> <mn>2</mn></msub> <annotation>${\rm MnBr}_2$</annotation></semantics></math> on the Graphene on Ir(110) Substrate: Growth, Structure, and Super-Moiré.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Hydrogen Toggling between Yoshimori Spin Spirals and Elliptical Dzyaloshinskii-Moriya Skyrmions in Fe on Ir(110).

Nano letters·2025
Same author

Spin-Polarized Scanning Tunneling Microscopy Measurements of an Anderson Impurity.

Physical review letters·2025

Related Experiment Video

Updated: Jun 22, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K

1D metals for 2D electronics

Wouter Jolie1, Thomas Michely2

  • 1II. Physikalisches Institut, University of Cologne, Cologne, Germany.

Nature Nanotechnology
|July 3, 2024
PubMed
Summary

No abstract available in PubMed .

More Related Videos

Planar and Three-Dimensional Printing of Conductive Inks
10:49

Planar and Three-Dimensional Printing of Conductive Inks

Published on: December 9, 2011

37.1K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

Related Experiment Videos

Last Updated: Jun 22, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K
Planar and Three-Dimensional Printing of Conductive Inks
10:49

Planar and Three-Dimensional Printing of Conductive Inks

Published on: December 9, 2011

37.1K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K