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P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits.

Zhixuan Cheng1,2, Xionghui Jia1,2, Bo Han3

  • 1State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China.

ACS Applied Materials & Interfaces
|July 8, 2024
PubMed
Summary

Electron-beam evaporation for top gates induces n-type doping in 2H-MoTe2 field-effect transistors (FETs) by creating defects. This method enables fabrication of reliable, homogeneous complementary metal-oxide semiconductor (CMOS) inverters on a single 2D material platform.

Keywords:
2D MoTe2CMOS inverternanoelectronics integrationp/n-type conversiontop gate engineering

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are key for next-generation logic circuits.
  • Top gate field-effect transistors (FETs) offer independent gate control and CMOS compatibility for TMDCs.
  • Fabrication of top gate FETs on TMDCs can impact device performance due to deposition methods.

Purpose of the Study:

  • Investigate the influence of different top-gate deposition methods on TMDC electrical properties.
  • Harness these influences to create homogeneous complementary metal-oxide semiconductor (CMOS) devices on a 2D TMDC platform.
  • Demonstrate the feasibility of fabricating functional CMOS circuits using 2D materials.

Main Methods:

  • Fabrication of p/n-type controllable top gate FET arrays using 2H-MoTe2.
  • Comparison of electron-beam evaporation (EBE) and thermal evaporation for top gate deposition.
  • High-resolution transmission electron microscopy (HR-TEM) for defect analysis.
  • Fabrication of double-top-gate MoTe2 homogeneous CMOS inverter arrays.

Main Results:

  • EBE induces n-doping in 2H-MoTe2, converting p-type to n-type, while thermal evaporation has minimal effect.
  • HR-TEM revealed atomic defects in MoTe2 and the MoTe2/Al2O3 interface caused by EBE's high-energy atoms.
  • Fabricated CMOS inverters showed clear logic swing, minimal hysteresis, and a high yield of ~93%.
  • The process is facile, transfer-free, and compatible with silicon technology.

Conclusions:

  • Top-gate deposition method critically affects 2D TMDC device characteristics, enabling p/n-type control.
  • EBE-induced defects can be leveraged for n-type channel formation in MoTe2 FETs.
  • Homogeneous CMOS circuits with high reliability and yield can be achieved on 2D TMDCs.
  • This work advances the integration of 2D TMDCs for practical nanoelectronic applications.