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Layer-number-parity-dependent abnormal magnetic ordering in few-layer CrI3 on N-face AlN substrate
Jiamin Chen1,2, Jiahao Chen1, Cong Wang3
1State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Nature Communications
|June 8, 2026
Summary
Researchers used a single-crystal aluminum nitride (AlN) substrate to control magnetic states in few-layer chromium triiodide (CrI3). This discovery enables programming novel magnetic ground states for advanced ultrathin magnetic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional van der Waals magnetic materials are crucial for ultrathin magnetic devices.
- Controlling magnetic properties in these materials is essential for device applications.
Purpose of the Study:
- To experimentally demonstrate how a single-crystal N-face aluminum nitride (AlN) substrate can program magnetic multistates in few-layer chromium triiodide (CrI3).
- To investigate the evolution sequence of these magnetic states.
- To understand the underlying mechanism of this phenomenon.
Main Methods:
- Experimental synthesis and characterization of few-layer CrI3 on a single-crystal N-face AlN substrate.
- Magnetic measurements using reflective magnetic circular dichroism (MCD) spectroscopy.
- First-principles calculations to elucidate the electronic and magnetic properties.
Main Results:
- Demonstrated layer-number-parity-dependent magnetic multistates and their evolution sequence in CrI3/AlN heterostructures.
- Observed distinct magnetic state evolution (e.g., +5 → -1 → +1 → -5) in odd-layer samples (5L-CrI3/AlN) under magnetic field sweeps.
- First-principles calculations revealed interfacial hole doping as the cause, leading to a novel ferrimagnetic order and differentiated interlayer coupling and anisotropy.
Conclusions:
- A single-crystal AlN substrate can vertically program novel magnetic ground states and their evolution sequence in few-layer CrI3 via interfacial hole doping.
- This approach offers a simplified method for designing two-dimensional magnetic devices with tailored functionalities.
- The findings advance the practical integration of 2D magnetic materials.
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