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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered

Grigorii Savchenko¹, Evgeniia Shabunina¹, Anton Chernyakov²

¹Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia.

Nanomaterials (Basel, Switzerland)

|July 13, 2024

Summary

Nanomaterial disorder (DND) significantly impacts nitride light-emitting diode (LED) performance, correlating with reduced external quantum efficiency (EQE). Excited defects (EDs) and their interactions with carriers cause efficiency droop and spectral changes.

Keywords:

LED band fluctuation potential efficiency droop external quantum efficiency multiphonon recombination nitrides random alloy fluctuations

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Area of Science:

Solid State Physics
Materials Science
Optoelectronics

Background:

Nitride light-emitting diodes (LEDs) are crucial for lighting and displays.
Understanding recombination processes is key to improving LED efficiency and performance.
Nanomaterial disorder (DND) and excited defects (EDs) are implicated in LED efficiency limitations.

Purpose of the Study:

To investigate the correlation between electro-optical properties and DND in nitride LEDs.
To elucidate the role of DND and EDs in efficiency droop and spectral characteristics.
To identify mechanisms of carrier interaction with EDs and their impact on LED performance.

Main Methods:

Studied nitride LEDs emitting from 270 to 540 nm with varying external quantum efficiency (EQE).
Analyzed the degree of nanomaterial disorder (DND) in quantum wells (QWs) and heterointerfaces.
Investigated carrier interactions with excited defects (EDs) through spectral and efficiency measurements.

Main Results:

A significant correlation was found between LED electro-optical properties and DND.
Decreased EQE is linked to increased DND and ED concentrations.
Two carrier interaction mechanisms with EDs were identified, affecting electroluminescence spectra and EQE.
These mechanisms contribute to efficiency droop and reversible LED degradation.

Conclusions:

DND and EDs are critical factors limiting nitride LED performance across various wavelengths.
Multiphonon carrier capture and ionization by EDs significantly impact EQE and efficiency droop.
Understanding these recombination processes is essential for designing high-efficiency, stable nitride LEDs.