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p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors

Carsten Strobel1, Carlos Alvarado Chavarin2, Martin Knaut1

  • 1Institute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Nanomaterials (Basel, Switzerland)
|July 13, 2024
PubMed

Keywords:
GABTdual-bandgermaniumgraphenehigh responsivityhigh speedp-typephotodetectionphototransistorsilicon

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