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Related Experiment Video

Updated: Jun 21, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Published on: October 23, 2018

p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors.

Carsten Strobel¹, Carlos Alvarado Chavarin², Martin Knaut¹

¹Institute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Nanomaterials (Basel, Switzerland)

|July 13, 2024

Summary

Researchers demonstrated a p-type Schottky contact between graphene and germanium for adjustable-barrier phototransistors. This advance enables dual-band photodetection, crucial for high-speed infrared and visible light applications.

Keywords:

GABT dual-band germanium graphene high responsivity high speed p-type photodetection phototransistor silicon

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Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

Graphene adjustable-barrier phototransistors offer potential for high-speed, high-responsivity dual-band photodetection.
This device requires both n-type and p-type Schottky contacts between graphene and semiconductors like silicon and germanium.
P-type Schottky contacts for graphene with silicon and germanium are less explored than n-type contacts.

Purpose of the Study:

To demonstrate a functional p-type Schottky contact between graphene and p-type germanium.
To investigate the photoresponse of graphene-semiconductor junctions in the infrared and visible spectrum.
To advance the development of graphene adjustable-barrier phototransistors for dual-band photodetection.

Main Methods:

Fabrication of p-type Schottky junctions using graphene and p-germanium.
Characterization of electrical rectification properties, including on-off ratios.
Measurement of photoresponse at telecommunication (infrared) and visible wavelengths.

Main Results:

A clear rectification behavior was achieved for the graphene/p-germanium p-type Schottky contact with on-off ratios near 10^3 (±5 V).
A distinct photoresponse was observed at infrared telecommunication wavelengths.
Rectification and photoresponse were also observed in the visible range for graphene/p-silicon junctions.

Conclusions:

The successful demonstration of a graphene/p-germanium p-type Schottky contact is a significant step towards functional graphene adjustable-barrier phototransistors.
These findings pave the way for developing novel photodetectors capable of dual-band operation.
The study highlights the potential of graphene-semiconductor interfaces for advanced optoelectronic devices.