Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.4K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Eliminating Buried Interface Voids for High-Efficiency and Stable Perovskite Solar Cells.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Anxiety, depression, and influencing factors of STD clinic clients in Shanghai: a cross-sectional study.

Frontiers in public health·2026
Same author

Two-Dimensional Chiral Perovskites for Integrated High-Performance Ultraviolet Full-Stokes Polarization Detection.

Journal of the American Chemical Society·2026
Same author

Effects of Zinc Fortification and Ultrasonic Treatment on the Physicochemical Properties, Structure, and Functionality of Germinated Black Rice Starch.

Journal of food science·2026
Same author

Screening of umami peptides from shrimp juice based on molecular docking and kinetic modeling, and investigation of their interaction mechanisms with T1R1/T1R3 receptors.

Food chemistry·2026
Same author

Reductive contact and dipolar interface engineering enable stable flexible CsSnI<sub>3</sub> nanowire photodetectors.

Nanoscale·2026

Related Experiment Video

Updated: May 1, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

8.9K

High defect tolerance β-CsSnI3 perovskite light-emitting diodes.

Haixuan Yu1, Tao Zhang1, Zhiguo Zhang1

  • 1Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China. xiongjieli@hust.edu.cn.

Materials Horizons
|July 15, 2024
PubMed
Summary

This study enhances near-infrared perovskite LEDs using beta-cesium tin iodide (β-CsSnI₃) for improved efficiency. Cesium formate stabilizes the material, reducing defects and boosting performance for optoelectronic applications.

More Related Videos

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.8K
Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
12:21

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

8.2K

Related Experiment Videos

Last Updated: May 1, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

8.9K
Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.8K
Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
12:21

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

8.2K

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Optoelectronics

Background:

  • All-inorganic lead-free CsSnI₃ shows promise for near-infrared perovskite light-emitting diodes (Pero-LEDs).
  • Defect-induced non-radiative recombination currently limits the optoelectronic properties and applications of CsSnI₃-based Pero-LEDs.

Purpose of the Study:

  • To investigate the defect tolerance of different CsSnI₃ phases for enhanced emission efficiency.
  • To develop a method for depositing and stabilizing highly crystalline β-CsSnI₃ films for improved Pero-LED performance.

Main Methods:

  • Comparative analysis of β-CsSnI₃ and γ-CsSnI₃ defect tolerance.
  • Deposition and stabilization of β-CsSnI₃ films using cesium formate.
  • Characterization of photoluminescence quantum yield (PLQY) and device performance.

Main Results:

  • β-CsSnI₃ demonstrates higher defect tolerance than γ-CsSnI₃.
  • Cesium formate addition suppresses electron-phonon scattering and non-radiative recombination, achieving PLQY up to ~10%.
  • Near-infrared LEDs based on β-CsSnI₃ emitters achieved a peak external quantum efficiency of 1.81% with excellent stability.

Conclusions:

  • The use of β-CsSnI₃ and cesium formate is a viable strategy to enhance the efficiency and stability of lead-free perovskite near-infrared LEDs.
  • This work paves the way for advanced optoelectronic devices with improved performance and reduced reliance on lead-based materials.