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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jul 14, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
11:38

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Eliminating Buried Interface Voids for High-Efficiency and Stable Perovskite Solar Cells.

Ying Xu1, Dongyang Zhang1, Tianyu Sun1

  • 1Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|July 13, 2026
PubMed
Summary

Interface engineering with bridging molecules significantly improves perovskite solar cells by minimizing voids and enhancing DMSO removal. This leads to higher efficiency and stability for large-area modules, paving the way for commercialization.

Keywords:
bridging moleculeburied interfacechelationperovskite solar modulestability

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Last Updated: Jul 14, 2026

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11:38

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Published on: February 27, 2017

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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Area of Science:

  • Materials Science
  • Renewable Energy
  • Chemical Engineering

Background:

  • Solution-processible perovskite solar cells (PSCs) offer low-cost, large-scale production potential.
  • Inefficient removal of dimethyl sulfoxide (DMSO) during annealing creates voids, degrading film quality, especially in large modules.
  • Trapped DMSO and subsequent void formation at the buried interface are critical challenges for PSC performance and stability.

Purpose of the Study:

  • To develop an interface engineering strategy to mitigate void formation at the buried interface in PSCs.
  • To enhance the removal of residual DMSO from perovskite precursor films.
  • To improve the efficiency and long-term stability of perovskite solar cells and modules.

Main Methods:

  • Introduction of bridging molecules, specifically 1,10-Phenanthroline-4,7-dicarboxylic acid (PDA) and 1,10-Phenanthroline-4-carboxylic acid (PCA), at the perovskite buried interface.
  • Utilizing the chelating properties of the 1,10-phenanthroline group in PDA and PCA to bind Pb2+ ions.
  • Facilitating DMSO evaporation through enhanced Pb2+ chelation to minimize void formation.

Main Results:

  • Bridging molecules effectively reduced voids at the buried interface by facilitating DMSO evaporation.
  • Small-area perovskite solar cells achieved a power conversion efficiency (PCE) of 25.15%.
  • Large-area mini-modules demonstrated a PCE of 21.15%, with unencapsulated modules retaining over 80% efficiency after 1,500 hours in ambient air.

Conclusions:

  • Interface engineering with PDA and PCA is a viable strategy to improve perovskite film quality and device performance.
  • The developed method significantly enhances the stability and efficiency of perovskite solar cells and modules under ambient conditions.
  • This approach addresses key challenges in scaling up perovskite solar technology for commercial applications.