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    Electric field-induced second-harmonic generation (EFISHG) measurements in semiconductor devices are improved by focusing lasers from the substrate side. This method eliminates background interference for accurate electric field analysis in GaN PN diodes.

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    Area of Science:

    • Semiconductor device characterization
    • Nonlinear optics
    • Photonics

    Background:

    • Electric field-induced second-harmonic generation (EFISHG) offers advanced semiconductor device design opportunities.
    • Current EFISHG techniques face challenges due to interference between background second-harmonic generation (SHG) and EFISHG signals.
    • Accurate electric field characterization is crucial for optimizing semiconductor performance.

    Purpose of the Study:

    • To demonstrate a method for eliminating interference in EFISHG measurements.
    • To enable straightforward quantitative electric field analysis in GaN PN diodes.
    • To investigate the incoherence between background SHG and EFISHG light.

    Main Methods:

    • Focusing laser from the transparent substrate side of a Gallium Nitride (GaN) PN diode.
    • Developing a model based on wave generation and propagation.
    • Comparing substrate-side measurements with PN junction interface-side measurements.

    Main Results:

    • Interference effects in EFISHG measurements were effectively eliminated by using the substrate-side illumination approach.
    • Quantitative electric field analysis was achieved straightforwardly, unlike interface-side measurements.
    • A proposed model highlighted the incoherence between background SHG and EFISHG light.

    Conclusions:

    • Illuminating from the substrate side is a superior method for EFISHG measurements in GaN PN diodes.
    • The observed incoherence is likely due to laser depth of focus and phase mismatch.
    • This technique facilitates precise electric field mapping for improved semiconductor device design.