A mixer architecture using GaN-based split-gate nanowire transistor.

Area of Science:

• Electrical Engineering
• Materials Science
• Radio-Frequency Engineering

Background:

• Frequency mixers are crucial for radio-frequency (RF) signal processing, enabling frequency translation and phase comparison.
• Traditional passive mixers exhibit significant conversion loss and poor isolation, limiting performance.
• Active mixers, particularly on Gallium Nitride (GaN) technology, are less developed but offer potential advantages.

Purpose of the Study:

• To demonstrate a novel mixer architecture utilizing a GaN split-gate nanowire transistor.
• To achieve low conversion loss and high isolation in RF mixers.
• To explore the potential of GaN technology for advanced monolithic mixer fabrication.

Main Methods:

• Fabrication of a GaN split-gate nanowire transistor.
• Utilizing electrostatic modulation of the effective gate width to form a constriction.
• Experimental and theoretical verification of mixing characteristics, including S-parameter measurements.

Main Results:

• The proposed GaN split-gate nanowire transistor mixer demonstrated low conversion loss.
• Extremely high isolation was achieved, verified through three-port S-parameter measurements.
• Output power spectral density peaked at the difference frequency, confirming effective frequency translation.

Conclusions:

• The GaN split-gate nanowire transistor mixer offers a viable solution for low conversion loss and high isolation.
• This architecture facilitates monolithic integration on the GaN platform, paving the way for advanced RF systems.
• The demonstrated device represents a significant advancement in GaN-based active mixer technology.