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Published on: February 25, 2017
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Laser nanofabrication inside silicon with spatial beam modulation and anisotropic seeding.
Rana Asgari Sabet1,2, Aqiq Ishraq2, Alperen Saltik1
1Department of Physics, Bilkent University, Ankara, Turkey.
Nature Communications
|July 16, 2024
Summary
Researchers developed a new method for precise nanofabrication deep inside silicon wafers. This breakthrough enables the creation of 100nm structures, advancing 3D nanophotonics and integrated systems.
Area of Science:
- Materials Science
- Nanotechnology
- Optics
Background:
- Silicon nanofabrication is typically limited to the surface.
- Current methods lack sub-micron precision for subsurface or in-chip fabrication.
- Existing techniques struggle with nonlinear effects and laser diffraction limits within silicon.
Purpose of the Study:
- To overcome dimensional barriers in silicon nanofabrication.
- To achieve controlled, high-precision nanofabrication deep inside silicon wafers.
- To demonstrate the creation of sub-micron feature sizes within silicon.
Main Methods:
- Utilizing spatially-modulated laser beams.
- Exploiting anisotropic feedback from preformed subsurface structures.
- Developing controlled nanofabrication techniques for silicon.
Main Results:
- Demonstrated buried nanostructures with feature sizes down to 100 ± 20 nm.
- Achieved subwavelength and multi-dimensional control in nanofabrication.
- Fabricated nanophotonics elements, including nanogratings with enhanced diffraction efficiency and spectral control.
Conclusions:
- Established controlled nanofabrication capability deep inside silicon.
- Improved the state-of-the-art in subsurface nanofabrication by an order of magnitude.
- Paved the way for 3D nanophotonics, micro/nanofluidics, and integrated electronic-photonic systems.

