Tuning Hole-Injection in Organic-Light Emitting Diodes with Self-Assembled Monolayers

Improving hole injection through the surface modification of indium tin oxide (ITO) with self-assembled monolayers (SAMs) is a promising method for modulating the carrier injection in organic light-emitting diodes (OLEDs). However, developing SAMs with the required characteristics remains a daunting challenge. Herein, we functionalize ITO with various phosphonic acid SAMs and evaluate the SAM-modified anodes in terms of their work function (WF), molecular distribution, coverage, and electrical conductivity. We fabricate and characterize green phosphorescent SAM-based OLEDs and compared their performance against devices based on the conventional poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole-injection layer. We find that the usage of [2-(3,6-diiodo-9H-carbazol-9-yl)ethyl]phosphonic acid (I-2PACz) SAM yields devices with superior performance characteristics, including a maximum luminance of ∼57,300 cd m^-2 and external quantum efficiency of up to ∼17%. This improvement is attributed to synergistic factors, including the deep WF of ITO/I-2PACz (5.47 eV), the formation of larger I-2PACz molecular clusters, and the intrinsic I-2PACz dipole, that collectively enhance hole-injection.