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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Quantum Hall systems typically display both even and odd integer quantized states.
  • Controlling these states is crucial for understanding exotic ground states and spin textures.
  • Bi2O2Se thin films are a novel system for exploring quantum Hall effects.

Purpose of the Study:

  • To investigate the quantum Hall effect in Bi2O2Se thin films.
  • To understand the influence of film thickness and asymmetry on quantized states.
  • To elucidate the role of the Rashba effect in observed phenomena.

Main Methods:

  • Experimental observation of quantum Hall effect in Bi2O2Se thin films up to 50 T.
  • Fabrication of epitaxial Bi2O2Se films with varying thicknesses, including one unit cell.
  • Theoretical modeling using a Rashba bilayer model based on ab initio band structures.

Main Results:

  • Thicker Bi2O2Se films showed only even-integer quantum Hall states.
  • A one-unit-cell Bi2O2Se film exhibited both odd and even-integer states.
  • The hidden Rashba effect in thicker films explains the absence of odd states.
  • A global Rashba effect in the thinnest film accounts for the emergence of odd states.

Conclusions:

  • The study reveals the critical role of the Rashba effect, influenced by film symmetry and thickness, in determining quantum Hall states in Bi2O2Se.
  • The findings demonstrate a method for selectively controlling quantum Hall states by manipulating film asymmetry.
  • This work opens avenues for exploring novel quantum phenomena and spintronic applications in 2D materials.