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A junction temperature model based on heat flow distribution in an IGBT module with solder layer voids
Qi Li1, Feng Zhang1, Yonghe Chen1
1Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China.
Heliyon
|July 23, 2024
Summary
Voids in solder layers significantly impact insulated-gate bipolar transistor (IGBT) thermal reliability. This study introduces a new model to accurately predict junction temperature and monitor horizontal temperature differences caused by voids.
Area of Science:
- Electrical Engineering
- Materials Science
- Semiconductor Devices
Background:
- Solder voids in insulated-gate bipolar transistors (IGBTs) degrade thermal reliability.
- Understanding heat flow disruption caused by voids is crucial for device performance.
Purpose of the Study:
- Investigate the impact of solder void size and fraction on heat flow, junction temperature, and thermal resistance.
- Develop an improved junction temperature model that accounts for void-induced heat flow distribution.
Main Methods:
- Established an improved junction temperature model incorporating heat flow distribution (HD) and void characteristics.
- Introduced horizontal thermal resistance and horizontal heat capacity to model void effects.
- Proposed a parameter extraction method for the new model.
Main Results:
- Heat flow is impeded by voids due to air's high thermal resistance, causing horizontal heat spreading.
- Module surface temperature difference increases with void fraction, rising from 9.591°C to 109.86°C as void fraction increases from 0% to 40%.
- The proposed model accurately estimates junction temperature and monitors horizontal temperature differences.
Conclusions:
- The developed model offers higher accuracy than traditional Cauer models for IGBT junction temperature estimation.
- The model precisely monitors horizontal temperature differences within the chip layer, crucial for thermal management.
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