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A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures
Guiqiang Yang1,2, Yidi Bao1,2, Xiaoling Chen1,2
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Heliyon
|July 25, 2024
Summary
Quantum dot solar cells (QDSCs) show better resistance to space radiation damage than traditional GaAs solar cells. However, low-energy protons and high fluences can still cause significant damage to QDSCs.
Area of Science:
- Materials Science
- Semiconductor Physics
- Space Engineering
Background:
- Space exploration necessitates robust solar cells (SCs) resistant to particle irradiation.
- Conventional GaAs SCs degrade under space radiation, limiting their long-term performance.
- Quantum dot solar cells (QDSCs) offer higher theoretical efficiency and improved irradiation resistance.
Purpose of the Study:
- To investigate the effects of proton irradiation on InAs/GaAs0.8Sb0.2 QDSCs.
- To compare the radiation tolerance of QDSCs with conventional GaAs SCs.
- To understand the influence of irradiation parameters on SC damage.
Main Methods:
- Utilized the SRIM program for simulating proton irradiation effects.
- Analyzed vacancy generation and displacement per atom (DPA) in both QDSCs and GaAs SCs.
- Investigated the impact of proton energy, fluence, and incident angle on damage.
Main Results:
- InAs/GaAs0.8Sb0.2 QDSCs exhibited fewer vacancies than GaAs SCs under low-energy proton irradiation.
- Low-energy protons and high irradiation fluences caused more significant damage in QDSCs.
- Proton incident angle influenced vacancy distribution, while the number of QD layers had minimal effect.
Conclusions:
- InAs/GaAs0.8Sb0.2 QDSCs demonstrate superior anti-irradiation characteristics compared to GaAs SCs.
- Optimizing irradiation conditions and understanding damage mechanisms are crucial for QDSC space applications.
- Further research is needed to fully leverage QDSC potential for space power systems.
