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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Unlocking High-Performance, Ultra-Low Power van der Waals Photo-Transistors: Toward Back-End-of-Line in-Sensor

Olaiyan Alolaiyan1, Shahad Albawardi1, Sarah Alsaggaf1

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Summary

A new modified van der Waals deposition lithography enables scalable, high-performance 2D electronic devices. This breakthrough facilitates CMOS + 2D integration for advanced applications like in-sensor machine vision (MV).

Keywords:
2D-field-effect-transistorsMoS2/WSe2 diodeMoS2/WSe2 photodetectorgate tunable photodetectorphototransistorvan der waals

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Two-dimensional (2D) materials show promise for machine vision (MV) devices.
  • Scalable 2D device fabrication faces challenges including contact resistance, Fermi level pinning (FLP), power consumption, and CMOS-compatible lithography.

Purpose of the Study:

  • To develop a lithography strategy for scalable, high-performance 2D devices compatible with CMOS technology.
  • To explore the potential of modified van der Waals (vdW) deposition lithography for fabricating advanced 2D electronic devices.

Main Methods:

  • A modified van der Waals (vdW) deposition lithography technique was employed.
  • Fabrication of van der Waals field effect transistors (vdW-FETs) using 2D materials.
  • Demonstration of a MoS2/WSe2 heterojunction diode and a MoS2/WSe2 vdW-FET phototransistor.

Main Results:

  • The modified vdW deposition lithography enabled high-performance vdW-FETs with high current on-off ratios and weak FLP.
  • A gate-tunable diode with an ideality factor of ~1.65 and current rectification of 10^2 was demonstrated.
  • An ultralow power MoS2/WSe2 vdW-FET phototransistor exhibited record gate-tunable photoresponsivity for white light detection.

Conclusions:

  • Modified vdW deposition lithography is a viable strategy for fabricating high-performance 2D devices.
  • The developed vdW-FETs are suitable for back-end-of-line CMOS + 2D integration.
  • The demonstrated phototransistor enables ultrasensitive optoelectronic applications, including in-sensor MV.