Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Correction: Colbeck Kirby et al. Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light. <i>Nanomaterials</i> 2024, <i>14</i>, 982.

Nanomaterials (Basel, Switzerland)·2024
Same author

Magnetic clusters as efficient EY-like spin-scattering centres in graphene.

Nanoscale·2024
Same author

Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light.

Nanomaterials (Basel, Switzerland)·2024
Same author

Benchmarking First-Principles Reaction Equilibrium Composition Prediction.

Molecules (Basel, Switzerland)·2023
Same author

Area-Selective Deposition of AlO<i></i> and Al-Silicate for Fully Self-Aligned Via Integration.

ACS applied materials & interfaces·2023
Same author

Frequency-dependent stimulated and post-stimulated voltage control of magnetism in transition metal nitrides: towards brain-inspired magneto-ionics.

Materials horizons·2022

Related Experiment Video

Updated: Jul 23, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding

Jayant Kumar Lodha1,2, Johan Meersschaut2, Mattia Pasquali2

  • 1Department of Chemistry, Faculty of Science, KU Leuven, B-3001 Leuven, Belgium.

Nanomaterials (Basel, Switzerland)
|July 26, 2024
PubMed
Summary

Area selective deposition (ASD) effectively prevents ruthenium (Ru) film defects on non-growth areas using self-assembled monolayers and small molecule inhibitors. This method enhances selectivity in integrated circuit fabrication.

Keywords:
Ruthenium ALDarea selective depositiondefect analysisself-assembled monolayer

More Related Videos

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

Related Experiment Videos

Last Updated: Jul 23, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

Area of Science:

  • Materials Science
  • Chemical Engineering
  • Semiconductor Manufacturing

Background:

  • Area selective deposition (ASD) is crucial for advanced integrated circuit (IC) fabrication, addressing misalignment issues inherent in traditional litho-etch methods.
  • ASD enables bottom-up metallization and resist tone inversion by selectively growing materials on designated areas (GA) while passivating others (NGA).
  • A key challenge in ASD is preventing particle and defect formation on the passivated non-growth areas.

Purpose of the Study:

  • To investigate the passivation of silicon oxide (SiO2) non-growth areas using self-assembled monolayers (SAMs) and small molecule inhibitors (SMIs) for selective ruthenium (Ru) film deposition.
  • To analyze the mechanisms of Ru defect generation on passivated surfaces during atomic layer deposition (ALD).
  • To demonstrate an optimized ASD process for Ru films on 3D patterned structures.

Main Methods:

  • Ruthenium (Ru) films were deposited using atomic layer deposition (ALD) with a tricarbonyl (trimethylenemethane) ruthenium (Ru TMM(CO)3) precursor and O2 co-reactant.
  • Silicon oxide (SiO2) non-growth areas were passivated using SAMs and small molecule inhibitors (SMIs), specifically dimethyl amino trimethyl silane (DMA-TMS).
  • Film properties, including roughness, growth per cycle (GPC), particle formation, coverage, and density, were analyzed as a function of ALD cycles.

Main Results:

  • Smooth Ru films (<0.1 nm RMS roughness) were achieved with an initial GPC of 1.6 Å/cycle.
  • Minimizing oxygen co-reactant dose improved ASD selectivity, yielding a Ru GPC of 0.95 Å/cycle while maintaining film quality.
  • Detailed analysis revealed insights into Ru defect generation mechanisms on passivated areas.
  • An optimized ASD of Ru was successfully demonstrated on TiN/SiO2 3D patterned structures using DMA-TMS as an SMI.

Conclusions:

  • Self-assembled monolayers and small molecule inhibitors effectively passivate SiO2 NGAs, enabling highly selective Ru deposition via ALD.
  • Controlling the oxygen co-reactant dose is critical for optimizing selectivity and minimizing defects in Ru ASD.
  • The findings provide a pathway for defect-free Ru film deposition in advanced semiconductor manufacturing.