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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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A gate tunable transmon qubit in planar Ge.

Oliver Sagi1, Alessandro Crippa2, Marco Valentini3

  • 1Institute of Science and Technology Austria, Klosterneuburg, Austria. oliver.sagi@ista.ac.at.

Nature Communications
|July 30, 2024
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Summary
This summary is machine-generated.

We developed a gate-tunable transmon (gatemon) using germanium, a CMOS-compatible material. This advance enables new possibilities for creating hybrid and protected qubits in quantum circuits.

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Area of Science:

  • Quantum Computing
  • Solid-State Physics
  • Materials Science

Background:

  • Gate-tunable transmons (gatemons) are crucial for hybrid quantum circuits.
  • Semiconductor Josephson junctions offer a promising platform for gatemons.
  • Germanium is a CMOS-compatible material with potential for quantum applications.

Purpose of the Study:

  • To fabricate and characterize a gatemon in planar Germanium.
  • To integrate the gatemon into an Xmon circuit coupled to a resonator.
  • To demonstrate the qubit's tunability and coherence properties.

Main Methods:

  • Fabrication of a gatemon using a planar Germanium platform.
  • Induction of superconductivity in a 2D hole gas using aluminum.
  • Integration into an Xmon circuit and coupling to a transmission line resonator.
  • Characterization via resonator and two-tone spectroscopy, and time-domain measurements.

Main Results:

  • Successful fabrication of a tunable gatemon in Germanium.
  • Demonstrated broad frequency tunability of the qubit.
  • Achieved energy relaxation and coherence times up to 75 nanoseconds.

Conclusions:

  • The developed Germanium gatemon is a viable building block for hybrid quantum circuits.
  • This work highlights the potential of group IV materials for scalable quantum technologies.
  • The results pave the way for novel hybrid and protected qubits in CMOS-compatible platforms.