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MOSFET01:16

MOSFET

440
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
440
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

312
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
312
Characteristics of MOSFET01:17

Characteristics of MOSFET

357
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
357
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

337
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
337
MOSFET Amplifiers01:17

MOSFET Amplifiers

148
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
148
MOS Capacitor01:25

MOS Capacitor

752
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
752

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Related Experiment Video

Updated: Jun 18, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Inkjet-Printed, High-Performance MoS2 Transistors and Unipolar Logic Electronics.

Sandeep Kumar Mondal1, Lakshmi Prakasan1, Naveen Kolluru1

  • 1Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India.

ACS Applied Materials & Interfaces
|July 31, 2024
PubMed
Summary

Inkjet-printed two-dimensional (2D) semiconductor transistors overcome interflake resistance for flexible electronics. This enables high-performance 2D thin film transistors and integrated circuits for advanced applications.

Keywords:
2D semiconductorsMoS2electrolyte gatinginkjet printingprinted electronicsthin film transistors (TFTs)unipolar logic electronics

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Two-dimensional (2D) semiconductor field-effect transistors offer flexibility and high carrier mobility, ideal for wearable electronics and smart sensors.
  • Large-area solution processing of 2D semiconductors is hindered by high interflake resistance in film transistors.
  • Overcoming interflake resistance is crucial for realizing practical applications of 2D thin film transistors.

Purpose of the Study:

  • To develop a fabrication method for high-performance 2D semiconductor thin film transistors using solution processing.
  • To investigate and optimize intraflake carrier transport in 2D transistors.
  • To demonstrate the feasibility of integrated logic circuits using these high-performance transistors.

Main Methods:

  • Fabrication of inkjet-printed sub-20 nm channel electrolyte-gated transistors with a narrow-channel, near-vertical transport architecture.
  • Passivation of sulfur vacancies via tailored surface treatment to enhance transistor performance.
  • Integration of transistors into unipolar depletion-load-type inverters and logic gates (NAND, NOR, OR).

Main Results:

  • Achieved predominantly intraflake carrier transport, bypassing high interflake resistance.
  • Demonstrated high current density (280 μA·μm-1) and an On-Off current ratio exceeding 1 × 107 with a low subthreshold swing (100 mV·decade-1).
  • Fabricated inverters with a maximum gain of 31 and logic gates operating at 1 kHz.

Conclusions:

  • The developed device architecture and surface treatment enable high-performance 2D thin film transistors through solution processing.
  • This work represents a significant advancement towards the realization of electronic circuits based on printed 2D thin film transistors.
  • The findings pave the way for scalable manufacturing of flexible and wearable electronic devices.