Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Endogenous retroviral elements LTR8B and MER65 rewire PSG9 regulation to control trophoblast syncytialization and pre-eclampsia risk.

Genome biology·2026
Same author

Erythropoietin alleviates syndrome-associated intellectual disability and autism-like behavior in Zbtb20-haploinsufficient Primrose syndrome mouse model.

JCI insight·2026
Same author

Thyroidectomy via an infraclavicular open scar-concealing approach (TICOSCA): A novel open technique with early clinical experience.

Tropical doctor·2026
Same author

Comment on "Long bones after suspected 'grave robbery': a comparison of different methods for the estimation of the post mortem interval".

Forensic science, medicine, and pathology·2026
Same author

ERV3-MLT1 provides cis-regulatory elements for human placental functioning and are commonly dysregulated in human-specific preeclampsia.

Genome biology·2025
Same author

Antagonistic regulation of LINE-1/Alu elements and their repressor APOBEC3B in cellular senescence.

Mobile DNA·2025

Related Experiment Video

Updated: Jun 9, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.7K

Oxide semiconductor based deep-subthreshold operated read-out electronics for all-printed smart sensor patches.

Jyoti Ranjan Pradhan1, Sushree Sangita Priyadarsini1, Sanjana R Nibgoor1

  • 1Department of Materials Engineering Indian Institute of Science (IISc) Bangalore Karnataka India.

Exploration (Beijing, China)
|March 5, 2025
PubMed
Summary

Researchers developed printed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) for smart sensor patches. These TFTs enable signal digitalization and visual recognition, operating at low voltages for standalone detection.

Keywords:
analog‐to‐digital converterinkjet printingprinted oxide electronicsprinted read‐out electronicssmart sensor patchesthin film transistors

More Related Videos

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.7K
Hybrid Printing for the Fabrication of Smart Sensors
08:35

Hybrid Printing for the Fabrication of Smart Sensors

Published on: January 31, 2019

8.1K

Related Experiment Videos

Last Updated: Jun 9, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.7K
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.7K
Hybrid Printing for the Fabrication of Smart Sensors
08:35

Hybrid Printing for the Fabrication of Smart Sensors

Published on: January 31, 2019

8.1K

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Sensor Technology

Background:

  • Solution-processed oxide thin film transistors (TFTs) offer high mobility electron transport.
  • Printed oxide TFTs have been underexplored at sensor interfaces.
  • Smart sensor patches require integrated read-out electronics.

Purpose of the Study:

  • To develop printed amorphous indium-gallium-zinc oxide (a-IGZO) TFTs for smart sensor applications.
  • To integrate signal amplifiers and analog-to-digital converters (ADCs) using printed TFTs.
  • To demonstrate a functional smart sensor patch with low-voltage operation.

Main Methods:

  • Fabrication of a-IGZO-based deep-subthreshold operated TFTs using commercial printing techniques.
  • Integration of TFTs into signal amplifiers and analog-to-digital converters (ADCs).
  • Development of a current drive circuit for visual signal recognition.

Main Results:

  • Successfully digitalized analog sensor signals up to 1 kHz using printed a-IGZO TFTs.
  • Demonstrated easy-to-detect visual recognition of sensor signals via a current drive circuit.
  • Achieved low-voltage operation (≤2 V) for the entire smart sensor patch.

Conclusions:

  • Printed a-IGZO TFTs are suitable for fabricating smart sensor patches with integrated electronics.
  • The developed sensor patch enables standalone detection and is compatible with on-chip energy sources.
  • This technology holds potential for diverse applications requiring low-power, integrated sensing.