Design of a novel high-sensitive SOI-Junctionless BioFET overcoming sensitivity degradation problems

Area of Science:

• Semiconductor device physics
• Nanotechnology
• Biophysics

Background:

• Conventional biosensors often require thick gate oxides for biomolecule trapping, limiting sensitivity.
• Silicon-on-insulator (SOI) junctionless technology offers high current, beneficial for biodevice applications.

Purpose of the Study:

• To propose and evaluate a new configuration of a label-free junctionless semiconductor biosensor.
• To enhance sensitivity and performance in biomolecule identification.

Main Methods:

• A nanocavity was engineered within the channel region of an SOI junctionless device.
• A hole trench was integrated beneath the channel to modulate energy bands and conduction.
• The device's sensitivity was tested using biomolecules like Biotin, Protein A, Bacteriophage T7, and Apomyoglobin.

Main Results:

• The proposed biosensor configuration demonstrated significantly enhanced sensitivity compared to conventional designs.
• The new design accommodates very low gate oxide thicknesses, unlike traditional biosensors.
• Performance was evaluated considering practical factors like fill factor, steric hindrance, and biomolecule charges.

Conclusions:

• The novel junctionless semiconductor device configuration offers superior sensing performance for biomolecule detection.
• This design advances label-free biosensing technology, particularly for SOI junctionless platforms.
• The integration of a channel nanocavity and hole trench optimizes energy band modulation for enhanced sensitivity.