Combining Nitrogen Doping and Vacancies for Tunable Resonant States in Graphite

We investigate the combination of nitrogen doping and vacancies in highly ordered pyrolytic graphite (HOPG), to engineer defect sites with adjustable electronic properties. We combine scanning tunneling microscopy and spectroscopy and density functional theory calculations to reveal the synergistic effects of nitrogen and vacancies in HOPG. Our findings reveal a remarkable shift of the vacancy-induced resonance peak from an unoccupied state in pristine HOPG to an occupied state in nitrogen-doped HOPG. This shift directly correlates with the shift of the charge neutrality point resulting from the n-doping induced by substitutional nitrogen. These results open new avenues for defect engineering in graphite or graphene and achieving novel functionalities for chemical activity or electronic properties.