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Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films
1National Laboratory of Solid State Microstructures, Department of Physics, <a href="https://ror.org/01rxvg760">Nanjing University</a> and <a href="https://ror.org/04ttadj76">Collaborative Innovation Center of Advanced Microstructures</a>, Nanjing 210093, People's Republic of China.
This study compares spin-charge conversion in RuO2 films, finding the (110) surface is isotropic and stronger, driven by the inverse spin Hall effect. Results contrast prior attributions, confirmed by spin pumping and spin-torque measurements.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Spin-charge conversion is crucial for spintronic devices.
- Understanding material-specific mechanisms is key for optimizing spin-charge conversion efficiency.
Purpose of the Study:
- To comparatively investigate spin-charge conversion in RuO2(101) and RuO2(110) films.
- To elucidate the underlying physical mechanisms responsible for spin-charge conversion in these materials.
Main Methods:
- Spin pumping experiments.
- Spin-torque ferromagnetic resonance (ST-FMR) measurements.
- Symmetry-based analysis and first-principles calculations.
Main Results:
- RuO2(101) films exhibit robust in-plane crystal-axis dependence.
- RuO2(110) films show isotropic but stronger spin-charge conversion.
- Inverse spin Hall effect (ISHE) dominates in both films, with potential coexistence of inverse spin splitting effect (ISSE) in RuO2(101).
- Nodal line splitting in RuO2(110) is identified as the origin of ISHE.
Conclusions:
- The dominant mechanism for spin-charge conversion in RuO2 films is the ISHE.
- Findings challenge previous attributions of ISSE as the primary mechanism.
- Reciprocal measurements confirm the spin pumping and ST-FMR results, providing robust evidence for the identified mechanisms.
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