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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction.

Jinye Yao1, Chenyu Li1, Min Shang1

  • 1School of Materials Science and Engineering, Dalian University of Technology, Dalian 116000, China.

Materials (Basel, Switzerland)
|August 10, 2024
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Summary

This study investigates Ni-W barrier layers for 3D integrated circuits, finding they initially impede tin diffusion but degrade at high temperatures due to Ni2WSn4 formation. This impacts solder joint reliability in microelectronic devices.

Keywords:
Ni-W layerdiffusionelectrodepositioninterfacial reactionintermetallic compounds

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Area of Science:

  • Materials Science
  • Microelectronics Engineering
  • Surface Science

Background:

  • 3D integrated circuits (ICs) face reliability challenges from electromigration and thermomigration due to miniaturization.
  • Intermetallic compound (IMC) growth in solder joints increases layer thickness and brittleness, compromising joint reliability.
  • Controlling IMC formation and growth is crucial for enhancing the lifespan of microelectronic devices.

Purpose of the Study:

  • To investigate the effectiveness of electrodeposited Ni-W layers as diffusion barriers between Sn and Cu.
  • To analyze the impact of the Ni-W layer's structure and the formation of a "bright layer" (Ni2WSn4) on barrier properties during soldering.
  • To understand the growth mechanisms of IMCs and the Ni-W layer at various temperatures.

Main Methods:

  • Electrodeposition of Ni-W barrier layers on Cu substrates.
  • Systematic investigation of barrier properties in Sn/Cu reactive couples.
  • Analysis of IMC formation and growth kinetics at different temperatures (250°C, 275°C, 300°C) and durations.

Main Results:

  • The Ni-W layer initially impedes Sn diffusion into the Cu substrate.
  • A "bright layer" (Ni2WSn4) forms during reflow, growing linearly and eventually compromising the Ni-W barrier's effectiveness.
  • At 300°C for 600s, the Ni-W barrier fails as Ni2WSn4 completely covers it, leading to rapid Sn and IMC growth.
  • IMC growth (Ni3Sn4-based) and Ni2WSn4 layer growth are primarily grain boundary diffusion-controlled at 250°C, 275°C, and 300°C.

Conclusions:

  • Ni-W layers serve as viable diffusion barriers but their long-term reliability is limited by the formation of Ni2WSn4.
  • The "bright layer" formation significantly alters diffusion pathways and reduces activation energy for Sn diffusion.
  • Understanding these growth mechanisms is essential for designing reliable solder joints and selecting appropriate Ni-W barrier layers for specific soldering processes in microelectronics.