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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optics

Background:

  • Extreme ultraviolet (EUV) lithography is crucial for semiconductor manufacturing, targeting sub-10 nm half-pitch (HP) nodes.
  • Conventional EUV interference lithography (EUV-IL) using gratings faces limitations in achieving ultra-high resolution.
  • Next-generation high numerical aperture (high NA) EUV scanners are under development for advanced CMOS production.

Purpose of the Study:

  • To introduce a novel mirror-based EUV-IL setup.
  • To overcome the diffraction efficiency limitations of grating-based EUV-IL.
  • To demonstrate ultra-high resolution patterning for future nanotechnological applications.

Main Methods:

  • Development of a novel EUV-IL system utilizing mirror-based technology.
  • Implementation of line/space patterning using hydrogen silsesquioxane (HSQ) resist.
  • Testing compatibility with standard EUV wavelength (13.5 nm) and shorter wavelengths.

Main Results:

  • Achieved line/space patterning down to 5 nm HP using the novel mirror-based EUV-IL setup.
  • Demonstrated the system's capability to operate at the standard EUV wavelength of 13.5 nm.
  • Confirmed compatibility with wavelengths beyond the standard EUV range.

Conclusions:

  • The mirror-based EUV-IL approach circumvents grating limitations, enabling diffraction-limit resolution.
  • This technology is vital for advancing nanoscience, technology, and future CMOS manufacturing nodes.
  • The developed system paves the way for ultimate photon-based resolution at EUV wavelengths and beyond.