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Related Concept Videos

Super-resolution Fluorescence Microscopy01:37

Super-resolution Fluorescence Microscopy

Super-resolution fluorescence microscopy (SRFM) provides a better resolution than conventional fluorescence microscopy by reducing the point spread function (PSF). PSF is the light intensity distribution from a point that causes it to appear blurred. Due to PSF, each fluorescing point appears bigger than its actual size, and it is the PSF interference of nearby fluorophores that causes the blurred image. Various approaches to achieving higher resolution through SRFM have recently been developed.

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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da).

Mohammad S M Saifullah1,2, Anil Kumar Rajak1, Kevin A Hofhuis1

  • 1Paul Scherrer Institut, Forschungsstrasse 111, Villigen PSI 5232, Switzerland.

ACS Nano
|August 20, 2024
PubMed
Summary

New metal-containing resists achieve angstrom-scale patterning with high resolution and low roughness. This breakthrough in resist chemistry overcomes traditional trade-offs, enabling advanced semiconductor manufacturing.

Keywords:
electron beam lithographyextreme ultraviolet lithographylow-molecular-mass resistsmetal oximatenanofabricationradical initiator

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Advanced semiconductor manufacturing relies on high-resolution patterning resists.
  • Existing resists face a trade-off between resolution, line-width roughness, and sensitivity.
  • Angstrom-scale patterning demands novel resist chemistries to overcome these limitations.

Purpose of the Study:

  • To develop a new class of low-molecular-mass, metal-containing resists for high-resolution patterning.
  • To investigate the mechanism of solubility switching in these novel resists.
  • To demonstrate the performance of these resists in electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL).

Main Methods:

  • Design and synthesis of modular, low-molecular-mass ( <500 Da) metal-containing resists.
  • Utilizing a two-component system: metal and a bonded radical initiator.
  • Investigating the molecular and chemical processes during exposure via secondary electron generation and intramolecular rearrangement.
  • Testing resist performance in high-resolution EBL and EUVL.

Main Results:

  • Demonstrated record 1.9-2.0 nm isolated patterns and 7 nm half-pitch dense lines using EBL.
  • Achieved 12 nm half-pitch line-space features with EUVL at 68 mJ/cm2.
  • Exhibited record low line-width roughness (≤2 nm) and a low Z factor (0.6 × 10-8 mJ·nm3) in both EBL and EUVL.

Conclusions:

  • Low-molecular-mass metal-containing resists offer a pathway to overcome traditional patterning trade-offs.
  • The developed resist platform enables high resolution, low roughness, and high sensitivity for angstrom-scale lithography.
  • Potential for unit-cell level patterning, paving the way for future semiconductor advancements.