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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

343
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
343
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

303
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
303
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

330
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
330
MOSFET01:16

MOSFET

434
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
434

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Updated: Jun 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor.

Franklin Liou1,2,3, Hsin-Zon Tsai1,2, Zachary A H Goodwin4,5

  • 1Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States.

ACS Nano
|August 19, 2024
PubMed
Summary
This summary is machine-generated.

We demonstrate controlling molecule diffusion on graphene field-effect transistors (FETs) using gate voltage. This electrostatically controlled surface diffusion opens new avenues for nanoassembly and thin-film growth.

Keywords:
diffusion barriergraphene field-effect transistormolecular electronicsscanning tunneling microscopysurface diffusion

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Area of Science:

  • Surface science
  • Materials science
  • Condensed matter physics

Background:

  • Controlling surface diffusion is key for nanoscale processes like nanoassembly and catalysis.
  • Graphene field-effect transistors (FETs) offer a platform for electrostatic control.

Purpose of the Study:

  • To demonstrate electrostatic control over the surface diffusion of F4TCNQ molecules on graphene FETs.
  • To investigate the influence of molecular charge state on diffusion dynamics.

Main Methods:

  • Utilized scanning tunneling microscopy (STM) to measure molecular diffusion.
  • Employed electrostatic gating by tuning the back-gate voltage (VG) of graphene FETs.
  • Performed first-principles density functional theory (DFT) calculations.

Main Results:

  • Gate voltage tuning switched F4TCNQ molecules between neutral and negatively charged states.
  • Neutral molecule diffusivity decreased with decreasing VG, involving rotational diffusion.
  • Negatively charged molecule diffusivity remained constant, dominated by translational motion.

Conclusions:

  • Gate-tunable diffusion barriers for F4TCNQ on graphene were achieved.
  • Graphene FETs can function as molecular diffusion switches.
  • This control enables advanced applications in nanoassembly and catalysis.