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Updated: Jun 23, 2026

Time Multiplexing Super Resolving Technique for Imaging from a Moving Platform

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Published on: February 12, 2014

Wavelength-multiplexed multi-mode EUV reflection ptychography based on automatic differentiation.

Yifeng Shao^1,2, Sven Weerdenburg³, Jacob Seifert⁴

¹Imaging Physics Department, Applied Science Faculty, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands. Y.Shao@tudelft.nl.

Light, Science & Applications

|August 19, 2024

Summary

This summary is machine-generated.

Ptychographic extreme ultraviolet (EUV) imaging offers nanoscale metrology for semiconductors. A new wavelength-multiplexed algorithm enhances throughput and accuracy, even with unstable EUV sources.

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Multiplex Chemical Imaging Based on Broadband Stimulated Raman Scattering Microscopy

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Published on: July 25, 2022

Area of Science:

Materials Science and Engineering
Optical Physics
Nanotechnology

Background:

Ptychographic extreme ultraviolet (EUV) diffractive imaging is a key technology for nanoscale metrology in the semiconductor industry.
Advancements in high-harmonic generation (HHG) EUV sources and computational methods have increased interest in this technique.
Current methods face challenges with source instabilities and computational complexity.

Purpose of the Study:

To introduce and test a novel wavelength-multiplexed reconstruction algorithm for ptychographic EUV imaging.
To enhance measurement throughput and data diversity for accurate nanoscale sample characterization.
To address and mitigate instabilities inherent in high-harmonic generation EUV sources.

Main Methods:

Development of a wavelength-multiplexed reconstruction algorithm.
Implementation of a modal approach to represent illumination using mutually incoherent spatial modes.
Utilizing a machine learning platform with automatic differentiation and GPU acceleration for complex computations.

Main Results:

The algorithm successfully accommodates experimental uncertainties and achieves resolution near the diffraction limit.
Demonstrated accurate reconstruction of wafer samples with 20-nm patterned gold structures.
Optimization over 200 million parameters enabled handling of complex physical interrelations.

Conclusions:

The novel algorithm significantly enhances measurement throughput and data diversity in EUV ptychography.
The modal approach effectively tackles HHG source instabilities.
Ptychography, enhanced by this algorithm, is established as an efficient and accurate metrology tool for semiconductor applications.