Preparation and Luminescence Properties of Broadband Orange-Emitting Persistent ScBaZn₃GaO₇:Bi³⁺ Phosphor

This article describes a new kind of afterglow material, ScBaZn₃GaO₇:Bi³⁺, which was synthesized through a high-temperature solid-phase method. Its crystal structure, photoluminescent characteristics, and afterglow characteristics were studied and analyzed. Upon excitation at 344 nm, ScBaZn₃GaO₇:Bi³⁺ exhibits broadband emission with a central wavelength located at 571 nm (fwhm = 172.98 nm). The sample exhibits an internal quantum efficiency of 65.1%. The bright yellow persistent luminescence of the ScBaZn₃GaO₇:Bi³⁺ sample was observed after 365 nm irradiation. Thermoluminescence spectroscopy revealed four primary traps within ScBaZn₃GaO₇:Bi³⁺, with depths of 0.676, 0.794, 0.882, and 0.972 eV. The traps located at energy levels of 0.676 and 0.794 eV were identified as the key contributors to the sample's afterglow. Finally, the ScBaZn₃GaO₇:Bi³⁺ sample was combined with a UV-LED chip to fabricate a high-power warm white-light-emitting diode (WLED) device, indicating the potential application prospect of ScBaZn₃GaO₇:Bi³⁺ phosphor in single-phase warm WLEDs.