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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
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Thin film ferroelectric photonic-electronic memory
Gong Zhang1, Yue Chen1, Zijie Zheng1
1Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore.
Light, Science & Applications
|August 23, 2024
Summary
Researchers developed a novel non-volatile photonic-electronic memory using a ferroelectric-silicon ring resonator. This memory can be programmed and erased electrically and optically, enabling future hybrid systems.
Area of Science:
- Photonics and Electronics
- Materials Science
- Non-volatile Memory
Background:
- Bridging electronic and photonic circuits requires integrated non-volatile memory.
- Current solutions lack compatibility with large-scale complementary metal-oxide semiconductor (CMOS) integration.
Purpose of the Study:
- To experimentally demonstrate a non-volatile photonic-electronic memory.
- To achieve electrical and optical access for memory programming and erasing.
Main Methods:
- Utilized a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator.
- Employed optical-to-electrical-to-optical conversion for memory operations.
Main Results:
- Successfully demonstrated electrical and optical programming/erasing.
- Achieved a high optical extinction ratio (6.6 dB) at low voltage (5 V).
- Reported memory endurance of 4 × 10^4 cycles and multi-level storage with a raw bit-error-rate < 5.9 × 10^-2.
Conclusions:
- The developed memory is a key technology for hybrid electronic-photonic systems.
- Potential applications include photonic interconnects, high-speed data communication, and neuromorphic computing.
