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Area of Science:

  • Photonics and Electronics
  • Materials Science
  • Non-volatile Memory

Background:

  • Bridging electronic and photonic circuits requires integrated non-volatile memory.
  • Current solutions lack compatibility with large-scale complementary metal-oxide semiconductor (CMOS) integration.

Purpose of the Study:

  • To experimentally demonstrate a non-volatile photonic-electronic memory.
  • To achieve electrical and optical access for memory programming and erasing.

Main Methods:

  • Utilized a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator.
  • Employed optical-to-electrical-to-optical conversion for memory operations.

Main Results:

  • Successfully demonstrated electrical and optical programming/erasing.
  • Achieved a high optical extinction ratio (6.6 dB) at low voltage (5 V).
  • Reported memory endurance of 4 × 10^4 cycles and multi-level storage with a raw bit-error-rate < 5.9 × 10^-2.

Conclusions:

  • The developed memory is a key technology for hybrid electronic-photonic systems.
  • Potential applications include photonic interconnects, high-speed data communication, and neuromorphic computing.