Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

338
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
338
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

303
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
303

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Quark-like modes of fractional orbital angular momentum.

Science bulletin·2026
Same author

On-Chip Asymmetric Steering of Phonon Polaritons via Grating-Driven Twisted α-Phase Molybdenum Trioxide Bilayers.

Nano letters·2026
Same author

Broadband slant-polarized series-fed microstrip patch antenna array based on magnetic current feeding technology.

Scientific reports·2026
Same author

Manifold optics.

Optics letters·2025
Same author

Topological-charge multiplexed metasurfaces for generating structural acoustic field and remote dynamic control.

Science advances·2025
Same author

Effective negative depth in water waves.

Science advances·2025
Same journal

Application of ephrin-B2 loaded glycol chitosan-silk fibroin hydrogel in the treatment of diabetic refractory wounds.

Scientific reports·2026
Same journal

International expert Delphi consensus on thromboprophylaxis in metabolic and bariatric surgery.

Scientific reports·2026
Same journal

Assessing the cross-region knowledge transfer capability of selected deep learning building vectorization methods in the context of available training datasets.

Scientific reports·2026
Same journal

Feasibility and preliminary effects of outdoor versus indoor cognitive-motor therapy in women with Alzheimer's disease: A randomized single-blind pilot study.

Scientific reports·2026
Same journal

Hallmarks of social action in the vocal turn-taking of wild common marmosets (Callithrix jacchus).

Scientific reports·2026
Same journal

Role and mechanism of AOPPs-induced NOX4-mediated ferroptosis in intervertebral disc degeneration.

Scientific reports·2026
See all related articles

Related Experiment Video

Updated: Jun 15, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

15.3K

Deep neural network-enabled multifunctional switchable terahertz metamaterial devices.

Jing Li1,2,3,4,5, Rui Cai1,3,4,5, Huanyang Chen2

  • 1School of Instrument and Electronics, North University of China, Taiyuan, 030051, China.

Scientific Reports
|August 27, 2024
PubMed
Summary
This summary is machine-generated.

A new multifunctional terahertz metamaterial (THz MMs) device, designed with deep neural networks (DNN), acts as an ultra-wideband absorber and a dual-functional polarization converter, offering broad bandwidth and high efficiency.

Keywords:
AbsorberDeep neural networks (DNN)Dual-wideband (UWB)MultifunctionalPolarization converter

More Related Videos

Fabricating Metamaterials Using the Fiber Drawing Method
11:57

Fabricating Metamaterials Using the Fiber Drawing Method

Published on: October 18, 2012

13.8K
Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K

Related Experiment Videos

Last Updated: Jun 15, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

15.3K
Fabricating Metamaterials Using the Fiber Drawing Method
11:57

Fabricating Metamaterials Using the Fiber Drawing Method

Published on: October 18, 2012

13.8K
Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K

Area of Science:

  • Metamaterials
  • Terahertz Technology
  • Nanophotonics

Background:

  • Terahertz (THz) metamaterials offer unique electromagnetic properties.
  • Developing multifunctional THz devices with switchable capabilities is crucial for advanced applications.
  • Existing devices often lack broad bandwidth or dual functionality.

Purpose of the Study:

  • To design and optimize a multifunctional switchable terahertz metamaterial (THz MMs) device.
  • To achieve ultra-wideband (UWB) absorption and dual-functional polarization transformation.
  • To leverage deep neural networks (DNN) for device optimization.

Main Methods:

  • Utilized deep neural networks (DNN) for the design and optimization of the THz MMs device.
  • Investigated the device's performance in different states of vanadium dioxide (VO2).
  • Analyzed absorption, polarization conversion, and angular stability.

Main Results:

  • Achieved UWB absorption (>90% rate) from 2.43-10 THz (145.2% RBW), insensitive to polarization.
  • Demonstrated dual-functional polarization conversion: linear-to-cross (4.58-10 THz, 74.3% RBW) and linear-to-circular (4.16-4.43 THz, 6.29% RBW, ellipticity ratio ~1).
  • Device shows wide-angle and high-efficiency performance.

Conclusions:

  • The designed THz MMs device exhibits excellent UWB absorption and versatile polarization conversion capabilities.
  • The DNN-supported optimization provides a pathway for developing advanced multifunctional THz devices.
  • Potential applications include THz communication, optical switches, and polarization control.