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Carrier Transport01:21

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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te.

Giheon Kim1, Jaeuk Bahng2, Jaemo Jeong3

  • 1Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Nano Letters
|August 28, 2024
PubMed
Summary
This summary is machine-generated.

Two-dimensional trigonal tellurium exhibits a significant nonlinear Hall response due to its Berry curvature dipole. Gate modulation enables high on/off ratios, paving the way for advanced electronic sensors.

Keywords:
Berry curvature dipoleWeyl semiconductorsnonlinear Hall effecttelluriumtopological transistors

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Topological Materials

Background:

  • Two-dimensional trigonal tellurium (2D Te) is a narrow-bandgap semiconductor (approx. 0.3 eV).
  • It possesses Weyl points and a strong Berry curvature dipole (BCD) near the band edge.
  • Topological properties are crucial for novel electronic applications.

Purpose of the Study:

  • Investigate the nonlinear Hall response in 2D Te.
  • Explore the effect of gate bias on the Berry curvature dipole (BCD).
  • Assess the potential of 2D Te for electrothermal detectors and sensors.

Main Methods:

  • Applying back-gate bias to tune the Fermi level in 2D Te.
  • Measuring the transverse nonlinear Hall response.
  • Analyzing the longitudinal current induced by band modulation.

Main Results:

  • A sharp increase in dissipationless transverse nonlinear Hall response was observed upon aligning the Fermi level with the BCD.
  • Gate modulation of BCD achieved an on/off ratio of 10^4 and responsivity of ~10^6 V/W.
  • Longitudinal current showed an on/off ratio of ~10 and was sustained up to 200 K with a 3-order-of-magnitude change.

Conclusions:

  • Gate modulation of the BCD in 2D Te significantly enhances nonlinear Hall effects.
  • The combination of transistor action and rectification boosts temperature sensitivity for the dissipationless Hall current.
  • 2D Te demonstrates potential for high-performance electrothermal detectors and sensors, driven by its topological properties.