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Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications

Adel Ashery1, Ahmed E H Gaballah2, Gamal M Turky3

  • 1Solid State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth St, Dokki, Giza 12622, Egypt.

Gels (Basel, Switzerland)
|August 28, 2024
PubMed

Keywords:
I–V and C–V characterizationgel materialsheterojunction diodepolymer oxide semiconductorpolyvinyl alcohol (PVA)

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